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AOB11S60 N-Channel MOSFET

AOB11S60 Description

isc N-Channel MOSFET Transistor AOB11S60 .
Designed for use in switch mode power supplies and general purpose applications.

AOB11S60 Features

* Drain Current
* ID= 11A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max)
* 100% avalanche tested

AOB11S60 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 45 A PD Total Dissipation @TC=25℃ 178 W TJ Max. Operating Junction Temperat

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Datasheet Details

Part number
AOB11S60
Manufacturer
INCHANGE
File Size
249.06 KB
Datasheet
AOB11S60-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE AOB11S60-like datasheet