Datasheet4U Logo Datasheet4U.com

AOB11S65 - N-Channel MOSFET

Description

purpose applications.

Features

  • Drain Current.
  • ID=11A@ TC=25℃.
  • Drain Source Voltage- : VDSS=650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – AOB11S65

📁 Similar Datasheet

  • AOB11S65 - Power Transistor (Freescale)
  • AOB11S65 - Power Transistor (Alpha & Omega Semiconductors)
  • AOB11S65L - 650V 11A Power Transistor (Alpha & Omega Semiconductors)
  • AOB11S60 - Power Transistor (Alpha & Omega Semiconductors)
  • AOB11S60L - Power Transistor (Alpha & Omega Semiconductors)
  • AOB1100L - 100V N-Channel Rugged Planar MOSFET (Freescale)
  • AOB1100L - 100V N-Channel Rugged Planar MOSFET (Alpha & Omega Semiconductors)
  • AOB11C60 - 11A N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOB11N60 - 11A N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOB10B60D - 10A Alpha IGBT (Alpha & Omega Semiconductors)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor AOB11S65 FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 45 A PD Total Dissipation @TC=25℃ 198 W TJ Max.
Published: |