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AOD240 Datasheet N-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor AOD240.

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 70 A IDM Drain Current-Single Pluse 300 A PD Total Dissipation @TC=25℃ 150 W TJ Max.

Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor AOD240 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0;

Key Features

  • Drain Current.
  • ID= 70A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 40V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 3mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

AOD240 Distributor & Price

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Similar Datasheet

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Alpha & Omega Semiconductors Logo AOD240 40V N-Channel MOSFET Alpha & Omega Semiconductors
Freescale Logo AOD240 N-Channel MOSFET Freescale
VBsemi Logo AOD240 N-Channel MOSFET VBsemi

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