isc P-Channel MOSFET Transistor
INCHANGE Semiconductor
AOD423
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= -0.25mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=-0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID=-20A
IGSS
IDSS
VSDF
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
VGS= ±25V;VDS= 0V
VDS= -64V; VGS= 0V;Tj=25℃
Tj=55℃
ISD=-1A, VGS = 0 V
-30
V
-1.5
-3.5
V
6.2
8.0
mΩ
±0.1 μA
-1
-5
μA
-1
V
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