AOD7N60 - N-Channel MOSFET

Inchange Semiconductor

Datasheet Details

Part number	AOD7N60
Manufacturer	Inchange Semiconductor
File Size	261.06 KB
Description	N-Channel MOSFET
Datasheet	AOD7N60 Datasheet

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.0 A IDM Drain Current-Single Pluse 24 A PD Total Dissipation @TC=25℃ 178 W TJ Max.

Operating Junction Temperature -50~150 ℃ Tstg Storage Temperature -50~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Overview

isc N-Channel MOSFET Transistor AOD7N60.

Key Features

Drain Current.
ID= 7.0A@ TC=25℃.
Drain Source Voltage- : VDSS=600V(Min).
Static Drain-Source On-Resistance : RDS(on) =1.3Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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