Datasheet Details
| Part number | AOI2606 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 267.63 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOI2606-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor AOI2606.
| Part number | AOI2606 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 267.63 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOI2606-INCHANGE.pdf |
|
|
|
·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 46 A IDM Drain Current-Single Pluse 184 A PD Total Dissipation @TC=25℃ 150 W TJ Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor AOI2606 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0;
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