AOI403 Datasheet P-Channel MOSFET

Manufacturer: Inchange Semiconductor

AOI403 p-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	AOI403
Manufacturer	Inchange Semiconductor
File Size	236.55 KB
Description	P-Channel MOSFET
Datasheet	AOI403 Datasheet

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -30 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous -70 A IDM Drain Current-Single Pluse -200 A PD Total Dissipation @TC=25℃ 90 W TJ Max.

Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.6 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Overview

isc P-Channel MOSFET Transistor AOI403.

Key Features

Drain Current.
ID=-70A@ TC=25℃.
Drain Source Voltage- : VDSS=-30V(Min).
Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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