AOI4T60P - N-Channel MOSFET

INCHANGE

AOI4T60P Datasheet Preview — Preview of AOI4T60P PDF

Datasheet Details

Part number	AOI4T60P
Manufacturer	INCHANGE
File Size	269.10 KB
Description	N-Channel MOSFET
Datasheet	AOI4T60P-INCHANGE.pdf

AOI4T60P Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4.0 A IDM Drain Current-Single Pluse 16 A PD Total Dissipation @TC=25℃ 83 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Re

Features

Drain Current.
ID= 4.0A@ TC=25℃.
Drain Source Voltage- : VDSS=600V(Min).
Static Drain-Source On-Resistance : RDS(on) =2.1Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jan 12, 2021 |