Datasheet4U Logo Datasheet4U.com

AOT10N65 - N-Channel MOSFET

Datasheet Summary

Description

purpose applications.

Features

  • Drain Current.
  • ID= 10A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – AOT10N65

Datasheet Details

Part number AOT10N65
Manufacturer INCHANGE
File Size 256.20 KB
Description N-Channel MOSFET
Datasheet download datasheet AOT10N65 Datasheet
Additional preview pages of the AOT10N65 datasheet.

📁 Similar Datasheet

  • AOT10N65 - 10A N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOT10N60 - 10A N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOT101 - AOT101 (ETC)
  • AOT10B60D - 10A IGBT (Alpha & Omega Semiconductors)
  • AOT10B65M1 - 10A Alpha IGBT (Alpha & Omega Semiconductors)
  • AOT10B65MQ2 - 10A AlphaIGBT (Alpha & Omega Semiconductors)
  • AOT10T60 - N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOT10T60P - N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOT1100L - 100V N-CHANNEL MOSFET (Alpha & Omega Semiconductors)
  • AOT11C60 - 11A N-Channel MOSFET (Alpha & Omega Semiconductors)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor AOT10N65 FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 36 A PD Total Dissipation @TC=25℃ 250 W TJ Max.
Published: |