AOT3N100 - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	AOT3N100
Manufacturer	INCHANGE
File Size	257.08 KB
Description	N-Channel MOSFET
Datasheet	AOT3N100 Datasheet
Additional preview pages of the AOT3N100 datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.8 A IDM Drain Current-Single Pluse 10 A PD Total Dissipation @TC=25℃ 132 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal

Features

Drain Current.
ID= 2.8A@ TC=25℃.
Drain Source Voltage- : VDSS= 1000V(Min).
Static Drain-Source On-Resistance : RDS(on) = 6Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jan 19, 2021 |