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AOT4N60 Datasheet Preview

AOT4N60 Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
AOT4N60
FEATURES
·Drain Current –ID= 4A@ TC=25
·Drain Source Voltage-
: VDSS=600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =2.2Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
4
A
IDM
Drain Current-Single Pluse
16
A
PD
Total Dissipation @TC=25
104
W
TJ
Max. Operating Junction Temperature -50~150
Tstg
Storage Temperature
-50~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.2
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

AOT4N60 Datasheet Preview

AOT4N60 Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=2A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±30V;VDS= 0
VDS=600V; VGS= 0
VDS=480V; VGS= 0@TJ=55
IS= 1A; VGS= 0
AOT4N60
MIN MAX UNIT
600
V
3.0
5.0
V
2.2
Ω
±100 nA
1
10
μA
1
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number AOT4N60
Description N-Channel MOSFET
Maker INCHANGE
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