Part AOT8N50
Description N-Channel MOSFET
Category MOSFET
Manufacturer Inchange Semiconductor
Size 256.79 KB
Inchange Semiconductor

AOT8N50 Overview

Description

Designed for use in switch mode power supplies and general purpose applications. SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 176 W TJ Max.

Key Features

  • Drain Current –ID= 8A@ TC=25℃
  • Drain Source Voltage- : VDSS= 500V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation