isc N-Channel MOSFET Transistor
AOTF10N90
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=5A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±30V;VDS= 0
VDS=900V; VGS= 0
VDS=720V; VGS= 0@TJ=125℃
IS= 1A; VGS= 0
MIN MAX UNIT
900
V
3.4
4.5
V
0.98
Ω
±100 nA
1
10
μA
1.0
V
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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