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AOTF16N50 - N-Channel MOSFET

Key Features

  • Drain Current ID= 16A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 500V(Min).
  • Low ON Resistance RDS(on) = 0.37Ω(Max).
  • Low leakage current.
  • Fast Switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel Mosfet Transistor AOTF16N50 ·FEATURES ·Drain Current ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Low ON Resistance RDS(on) = 0.37Ω(Max) ·Low leakage current ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 16 A IDM Drain Current-Single Plused 64 A PD Power Dissipation 50 W Tj Max.