isc N-Channel MOSFET Transistor
AOTF20S60L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
600
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2.8
4.1
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=10A
0.199 Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=600V; VGS= 0
VDS=600V; VGS= 0@TC=150℃
VSD
Forward On-Voltage
IS= 10A; VGS= 0
±100 nA
10
1
μA
0.84
V
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