isc N-Channel MOSFET Transistor
AOTF404
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS
Drain-Source
Voltage
Breakdown VGS= 0; ID= 0.25mA
105
V
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
VDS= 5V; ID= 0.25mA
2.5
VGS= 10V; ID= 20A
VGS= 10V; ID= 20A@TJ= 125℃
4.0
V
28
47
mΩ
IGSS
Gate-Body Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 105V; VGS= 0
VDS= 105V; VGS= 0@TJ= 55℃
±100 nA
1
5
μA
VSD
Forward On-Voltage
IS= 1A; VGS= 0
1
V
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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