Datasheet4U Logo Datasheet4U.com

APT10M25BVR Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

📥 Download Datasheet

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 75 A IDM Drain Current-Single Pluse 300 A PD Total Dissipation @TC=25℃ 300 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.42 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT10M25BVR ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Overview

isc N-Channel MOSFET Transistor APT10M25BVR.

Key Features

  • Drain Current.
  • ID=75A@ TC=25℃.
  • Drain Source Voltage- : VDSS=100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =0.025Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Advanced Power Technology Logo APT10M25BVR MOSFET Advanced Power Technology
Advanced Power Technology Logo APT10M25BVFR MOSFET Advanced Power Technology
Advanced Power Technology Logo APT10M25SVR MOSFET Advanced Power Technology

More Datasheets from Inchange Semiconductor

Part Number Description
APT10M09B2VFR N-Channel MOSFET
APT10M09LVFR N-Channel MOSFET
APT10M19BVR N-Channel MOSFET
APT11F80B N-Channel MOSFET
APT11N80BC3G N-Channel MOSFET
APT12M80B N-Channel MOSFET
APT15D60K Ultra fast Rectifier
APT15DQ60BCT Ultrafast Rectifier
APT17F80B N-Channel MOSFET
APT18F60B N-Channel MOSFET