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APT10M25BVR - N-Channel MOSFET

Datasheet Summary

Description

purpose applications.

Features

  • Drain Current.
  • ID=75A@ TC=25℃.
  • Drain Source Voltage- : VDSS=100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =0.025Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number APT10M25BVR
Manufacturer INCHANGE
File Size 370.56 KB
Description N-Channel MOSFET
Datasheet download datasheet APT10M25BVR Datasheet
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isc N-Channel MOSFET Transistor APT10M25BVR FEATURES ·Drain Current –ID=75A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.025Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 75 A IDM Drain Current-Single Pluse 300 A PD Total Dissipation @TC=25℃ 300 W TJ Max.
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