APT20M18LVFR Datasheet | Inchange Semiconductor

Features - Drain Current - ID= 100A@ TC=25℃ - Drain Source Voltage- : VDSS=200V(Min) - Static Drain-Source On-Resistance : RDS(on) =0.018Ω(Max) - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION - Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage Gate-Source Voltage-Continuous ±30 Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.20 ℃/W isc website：.iscsemi. 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25m...