APT56M50B2 - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	APT56M50B2
Manufacturer	INCHANGE
File Size	296.89 KB
Description	N-Channel MOSFET
Datasheet	APT56M50B2 Datasheet
Additional preview pages of the APT56M50B2 datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 56 A IDM Drain Current-Single Pluse 175 A PD Total Dissipation @TC=25℃ 780 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal

Features

Drain Current.
ID= 56A@ TC=25℃.
Drain Source Voltage- : VDSS=500V(Min).
Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Feb 25, 2021 |