APT66M60B2 mosfet equivalent, n-channel mosfet.
*Static Drain-Source On-Resistance
: RDS(on) = 90mΩ(Max)
*Fast Switching
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performan.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source .
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