Datasheet Details
| Part number | APT77N60BC6 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 371.57 KB |
| Description | N-Channel MOSFET |
| Datasheet | APT77N60BC6-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | APT77N60BC6 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 371.57 KB |
| Description | N-Channel MOSFET |
| Datasheet | APT77N60BC6-INCHANGE.pdf |
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·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 77 A IDM Drain Current-Single Pluse 272 A PD Total Dissipation @TC=25℃ 481 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.26 ℃/W APT77N60BC6 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT77N60BC6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
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APT77N60BC6 | Super Junction MOSFET | Microsemi |
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