Datasheet Details
| Part number | B1038 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.50 KB |
| Description | Silicon PNP Power Transistor |
| Download | B1038 Download (PDF) |
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Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor.
| Part number | B1038 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.50 KB |
| Description | Silicon PNP Power Transistor |
| Download | B1038 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1310 APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -5 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -0.6 A 30 W 150 ℃ -55~150 ℃ Product Specification 2SB1038 isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
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