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B1236 - Silicon PNP Power Transistor

Description

High breakdown voltage.

Low collector output capacitance.

High transition frequency.

Complement to Type 2SD1857 APPLICATIONS

voltage regulator, and general purpose power amplifiers.

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INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage. (BVCEO = -120V) ·Low collector output capacitance. ·High transition frequency. (fT = 50MHz) ·Complement to Type 2SD1857 APPLICATIONS ·Designed for audio amplifier, voltage regulator, and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICP Collector Current-Pulse -3 A PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Range 10 150 -55~150 W ℃ ℃ Product Specification 2SB1236 isc website：www.iscsemi.
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