B1353 - Silicon PNP Power Transistor

Inchange Semiconductor

General Description

Good Linearity of hFE Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) Complement to Type 2SD2033 APPLICATIONS

Designed for use in high voltage driver applications.

📥 Download Datasheet

B1353 silicon pnp power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	B1353
Manufacturer	Inchange Semiconductor
File Size	176.67 KB
Description	Silicon PNP Power Transistor
Datasheet	B1353 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
B1351	2SB1351	Sanken Electric
B1357	2SB1357	Rohm
B130	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER	Diodes Incorporated
B130	SCHOTTKY BARRIER RECTIFIER	EIC
B130-E3	Surface Mount Schottky Barrier Rectifier	Vishay

Other Datasheets by Inchange Semiconductor

Part Number	Description
B1370	PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD2033 APPLICATIONS ·Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1.5 A 1.8 W 20 150 ℃ -55~150 ℃ Product Specification 2SB1353 isc website：www.iscsemi.