B1353
B1353 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Good Linearity of h FE
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
- plement to Type 2SD2033
APPLICATIONS
- Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
VCEO Collector-Emitter Voltage
-120
VEBO Emitter-Base Voltage
-5.0 V
IC Collector Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-1.5 A
1.8 W
150 ℃
-55~150
℃
Product Specification
2SB1353 isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown...
