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B1353 Silicon PNP Power Transistor

B1353 Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor .
Good Linearity of hFE. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Complement to Type 2SD2033 APPLICATIONS. Design.

B1353 Applications

* Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous Collector Power Dissipation

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Datasheet Details

Part number
B1353
Manufacturer
INCHANGE
File Size
176.67 KB
Datasheet
B1353-INCHANGE.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor INCHANGE
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