Datasheet Details
| Part number | B992 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.02 KB |
| Description | 2SB992 |
| Datasheet | B992-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor Product.
| Part number | B992 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.02 KB |
| Description | 2SB992 |
| Datasheet | B992-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ IC= -4A ·Complement to Type 2SD1362 APPLICATIONS ·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -1 A 1.5 W 40 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon PNP Power Transistor Product Specification 2SB992 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
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