Datasheet Details
| Part number | BC337 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.21 KB |
| Description | NPN Transistor |
| Download | BC337 Download (PDF) |
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| Part number | BC337 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.21 KB |
| Description | NPN Transistor |
| Download | BC337 Download (PDF) |
|
|
|
·Low Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF-Driver stages and low power output stages.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range BC337 VALUE UNIT 50 V 45 V 5 V 800 mA 625 mW 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC=100μA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA;
isc Silicon NPN Transistor.
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| Part Number | Description |
|---|---|
| BC369 | PNP Transistor |