BC369
BC369 is PNP Transistor manufactured by Inchange Semiconductor.
FEATURES
- High Current Low Voltage
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCEO
Collector-Base Voltage Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Rth j-a Thermal Resistance,Junction to Ambient
Junction Temperature
Tstg
Storage Temperature Range
VALUE -25 -20 -5
UNIT V V V
-1
625 m W
℃/W
℃
-55~150
℃ isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
V(BR)CEO V(BR)CBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
VCE(sat) Collector-Emitter Saturation...
