BC847
BC847 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- DC Current Gain-
: h FE=110-800 @IC= 2m A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min.)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Ideally suited for automatic insertion.
- For switching and AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
Tstg
Storage Temperature
VALUE 50 45 6 0.1 0.2 150
-65~150
UNIT V V V A W ℃ ℃ isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Plastic-Encapsulate Transistors
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10m A; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA; IC=...
