Datasheet Details
| Part number | BD112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.78 KB |
| Description | NPN Transistor |
| Download | BD112 Download (PDF) |
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| Part number | BD112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.78 KB |
| Description | NPN Transistor |
| Download | BD112 Download (PDF) |
|
|
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·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=75℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor BD112 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;
IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD112.
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