Datasheet Details
| Part number | BD112 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 175.78 KB |
| Description | NPN Transistor |
| Datasheet |
 BD112-INCHANGE.pdf
|
| Part number | BD112 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 175.78 KB |
| Description | NPN Transistor |
| Datasheet |
BD112-INCHANGE.pdf
|
Excellent Safe Operating Area Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 5A Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation.APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter
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