Datasheet Details
| Part number | BD116 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.17 KB |
| Description | NPN Transistor |
| Download | BD116 Download (PDF) |
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| Part number | BD116 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.17 KB |
| Description | NPN Transistor |
| Download | BD116 Download (PDF) |
|
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·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for RF power and general-purpose audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB Base Current-Continuous 1 A PC Collector Power Dissipation@TC=75℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BD116 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHA BD116 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
isc Silicon NPN Power Transistor INCHA.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD11600NUX | USB Switch | ROHM |
|
BD11670GWL | USB Switch | ROHM |
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