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BD140 Datasheet Preview

BD140 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
BD140
DESCRIPTION
·DC Current Gain-
: hFE= 63(Min)@ IC= -0.15A
·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -80V(Min)
·Complement to type BD139
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ Ta=25
Collector Power Dissipation
@ TC=25
Junction Temperature
-100
V
-80
V
-5
V
-1.5
A
-0.5
A
1.25
W
12.5
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
10 /W
Rth j-a Thermal Resistance,Junction to Ambient 100 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BD140 Datasheet Preview

BD140 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
BD140
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= -0.5A; VCE= -2V
VCB= -30V; IE= 0
VCB= -30V; IE= 0,TC=125
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -5mA ; VCE= -2V
hFE-2
DC Current Gain
IC= -0.5A ; VCE= -2V
hFE-3
DC Current Gain
IC= -0.15A ; VCE= -2V
MIN TYP. MAX UNIT
-80
V
-0.5 V
-1.0 V
-0.1
-10
μA
-0.1 μA
40
25
63
250
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BD140
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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