Datasheet Details
| Part number | BD141 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.60 KB |
| Description | NPN Transistor |
| Download | BD141 Download (PDF) |
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| Part number | BD141 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.60 KB |
| Description | NPN Transistor |
| Download | BD141 Download (PDF) |
|
|
|
·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 4A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 3 A PC Collector Power Dissipation@TC=25℃ 117 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor BD141 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD141.
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