Datasheet Details
| Part number | BD157 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.73 KB |
| Description | NPN Transistor |
| Download | BD157 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BD157.
| Part number | BD157 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.73 KB |
| Description | NPN Transistor |
| Download | BD157 Download (PDF) |
|
|
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·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·DC Current Gain- : hFE = 30~240(Min) @ IC= 50mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power output stages for television, radio, phonograph and other consumer product applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 275 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Peak 1.0 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.25 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD157 | Plastic Medium Power NPN Silicon Transistor | Motorola Inc |
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BD157 | NPN Epitxial Silicon Transistor | Fairchild Semiconductor |
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