Datasheet4U Logo Datasheet4U.com

BD157 Datasheet - INCHANGE

NPN Transistor

BD157 General Description

*Collector *Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) *DC Current Gain- : hFE = 30~240(Min) @ IC= 50mA *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power output stages for television, radio, phonograph.

BD157 Datasheet (201.73 KB)

Preview of BD157 PDF

Datasheet Details

Part number:

BD157

Manufacturer:

INCHANGE

File Size:

201.73 KB

Description:

Npn transistor.

📁 Related Datasheet

BD157 Plastic Medium Power NPN Silicon Transistor (Motorola Inc)

BD157 NPN Epitxial Silicon Transistor (Fairchild Semiconductor)

BD158 NPN Epitxial Silicon Transistor (Fairchild Semiconductor)

BD158 Plastic Medium Power NPN Silicon Transistor (Motorola Inc)

BD158 NPN Transistor (INCHANGE)

BD159 POWER TRANSISTOR NPN SILICON (ON Semiconductor)

BD159 NPN Epitxial Silicon Transistor (Fairchild Semiconductor)

BD159 Plastic Medium Power NPN Silicon Transistor (Motorola Inc)

BD159 NPN Transistor (INCHANGE)

BD159G Plastic Medium-PowerSilicon NPN Transistor (ON Semiconductor)

TAGS

BD157 NPN Transistor INCHANGE

Image Gallery

BD157 Datasheet Preview Page 2

BD157 Distributor