Datasheet Details
| Part number | BD162 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.56 KB |
| Description | NPN Transistor |
| Datasheet |
 BD162 Datasheet
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| Part number | BD162 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.56 KB |
| Description | NPN Transistor |
| Datasheet |
BD162 Datasheet
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·Continuous Collector Current -IC= 4A ·Excellent Safe Operating Area ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 15 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD162 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD162.
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