BD175 transistor equivalent, npn transistor.
*Designed for medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
.
*DC Current Gain-
: hFE= 40-250(Min)@ IC= 0.15A
*Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= 45V(Min)
*Complement to type BD176
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS .
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