Datasheet Details
| Part number | BD190 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.44 KB |
| Description | PNP Transistor |
| Download | BD190 Download (PDF) |
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Overview: isc Silicon PNP Power Transistor.
| Part number | BD190 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.44 KB |
| Description | PNP Transistor |
| Download | BD190 Download (PDF) |
|
|
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·DC Current Gain- : hFE= 40(Min)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -60V(Min) ·Complement to type BD189 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5 to10 Watt audio amplifiers utilizing complementary or ruais complementary circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.12 ℃/W BD190 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD190 | PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR | Motorola Inc |
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BD190 | SILICON POWER TRANSISTOR | SavantIC |
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