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BD202F Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD202F -60V(Min)- BD204F ·Complement to Type BD201F/203F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD202F -60 VCBO Collector-Base Voltage V BD204F -60 BD202F -45 VCEO Collector-Emitter Voltage V BD204F -60 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 6.3 ℃/W BD202F/204F isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD202F/204F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage BD202F BD204F IC= -50mA ;IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A;

IB= -0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A;