Datasheet Details
| Part number | BD214 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.50 KB |
| Description | PNP Transistor |
| Download | BD214 Download (PDF) |
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| Part number | BD214 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.50 KB |
| Description | PNP Transistor |
| Download | BD214 Download (PDF) |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 90 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD214 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5.0A;
IB= -0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A;
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD214.
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| BD204F | PNP Transistor |
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| BD230 | Silicon NPN Power Transistor |