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BD224 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain -hFE =30(Min)@ IC= -0.3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 36 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD224 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD224.