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BD226 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD227/229/231 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in driver stages in television circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD226 45 VCBO Collector-Base Voltage BD228 60 BD230 100 BD226 45 VCEO Collector-Emitter Voltage BD228 60 BD230 80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD226 45 BD228 60 BD230 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC≤62℃ TJ Junction Temperature 3.0 12.5 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W BD226/228/230 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD226 BD228 IC= 50mA ;

IB= 0 BD230 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;

Overview

isc Silicon NPN Power Transistor.