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BD229 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

Download the BD229 datasheet PDF. This datasheet also includes the BD227 variant, as both parts are published together in a single manufacturer document.

General Description

·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD226/228/230 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in driver stages in television circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD227 -45 VCBO Collector-Base Voltage BD229 -60 BD231 -100 BD227 -45 VCEO Collector-Emitter Voltage BD229 -60 BD231 -80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD227 BD229 BD231 -45 -60 -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC≤62℃ TJ Junction Temperature -3.0 12.5 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W BD227/229/231 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD227 BD229 IC= -50mA ;

IB= 0 BD231 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;