Datasheet Details
| Part number | BD232 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.66 KB |
| Description | NPN Transistor |
| Download | BD232 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BD232.
| Part number | BD232 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.66 KB |
| Description | NPN Transistor |
| Download | BD232 Download (PDF) |
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·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power output stages and line driver in TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.25 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 6.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 150mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| Anaren | BD2327N50100AHF | Ultra Low Profile 0404 Balun | Anaren |
| Part Number | Description |
|---|---|
| BD230 | Silicon NPN Power Transistor |
| BD231 | PNP Transistor |
| BD239 | NPN Transistor |
| BD239A | NPN Transistor |
| BD239B | NPN Transistor |
| BD239C | NPN Transistor |
| BD201F | NPN Transistor |
| BD202F | PNP Transistor |
| BD203F | NPN Transistor |
| BD204F | PNP Transistor |