Datasheet Details
| Part number | BD241B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.69 KB |
| Description | NPN Transistor |
| Download | BD241B Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BD241/A/B/C.
Download the BD241B datasheet PDF. This datasheet also includes the BD241 variant, as both parts are published together in a single manufacturer document.
| Part number | BD241B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.69 KB |
| Description | NPN Transistor |
| Download | BD241B Download (PDF) |
|
|
|
·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241;
60V(Min)- BD241A 80V(Min)- BD241B;
100V(Min)- BD241C ·Complement to Type BD242/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD241 55 BD241A 70 VCBO Collector-Base Voltage V BD241B 90 BD241C 115 BD241 45 VCEO Collector-Emitter Voltage BD241A 60 V BD241B 80 BD241C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 5.0 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.0 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD241/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BD241 45 VCEO(SUS) Collector-Emitter Sustaining Voltage BD241A BD241B IC= 30mA ;IB= 0 60 V 80 BD241C 100 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD241B | Complementary Silicon Plastic Power Transistors | Motorola Inc |
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BD241B | COMPLEMENTARY SILICON POWER TRANSISTORS | STMicroelectronics |
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BD241B | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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BD241B | POWER TRANSISTORS COMPLEMENTARY SILICON | ON Semiconductor |
 |
BD241B | NPN SILICON POWER TRANSISTORS | Bourns |
| Part Number | Description |
|---|---|
| BD241 | NPN Transistor |
| BD241A | NPN Transistor |
| BD241C | NPN Transistor |
| BD240 | PNP Transistor |
| BD240A | PNP Transistor |
| BD240B | PNP Transistor |
| BD240C | PNP Transistor |
| BD242 | PNP Transistor |
| BD242A | PNP Transistor |
| BD242B | PNP Transistor |