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BD242 - PNP Transistor

Description

DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C Complement to Type BD241/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operatio

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Other Datasheets by Inchange Semiconductor

Part Number Description
BD242A PNP Transistor
BD242B PNP Transistor
BD242C PNP Transistor
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BD240A PNP Transistor

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isc Silicon PNP Power Transistor INCHANGE Semiconductor BD242/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C ·Complement to Type BD241/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD242 -55 BD242A -70 VCBO Collector-Base Voltage V BD242B -90 BD242C -115 BD242 -45 BD242A -60 VCEO Collector-Emitter Voltage V BD242B -80 BD242C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3.
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