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BD242B Datasheet Preview

BD242B Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
BD242/A/B/C
DESCRIPTION
·DC Current Gain -hFE = 25(Min)@ IC= -1.0A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A
-80V(Min)- BD242B; -100V(Min)- BD242C
·Complement to Type BD241/A/B/C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
BD242
-55
BD242A
-70
VCBO
Collector-Base Voltage
V
BD242B
-90
BD242C
-115
BD242
-45
BD242A
-60
VCEO
Collector-Emitter Voltage
V
BD242B
-80
BD242C -100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3.0
A
ICM
Collector Current-Peak
-5.0
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-1.0
A
40
W
150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
isc websitewww.iscsemi.com
3.125 /W
1 isc & iscsemi is registered trademark




INCHANGE

BD242B Datasheet Preview

BD242B Datasheet

PNP Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD242/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD242
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD242A
BD242B
IC= -30mA ;IB= 0
BD242C
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.6A
VBE(on) Base-Emitter On Voltage
BD242
IC= -3A ; VCE= -4V
VCE= -45V; VBE= 0
ICES
Collector
Cutoff Current
BD242A
BD242B
VCE= -60V; VBE= 0
VCE= -80V; VBE= 0
BD242C
VCE= -100V; VBE= 0
ICEO
Collector
Cutoff Current
BD242/A
VCE= -30V;IB= 0
BD242B/C VCE= -60V;IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A ; VCE= -4V
hFE-2
DC Current Gain
IC= -3A ; VCE= -4V
fT
Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V, ftest= 1.0MHz
MIN MAX UNIT
-45
-60
V
-80
-100
-1.2
V
-1.8
V
-0.2 mA
-0.3 mA
-1.0 mA
25
10
3.0
MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BD242B
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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BD242B Datasheet PDF





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