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BD244 - PNP Transistor

Description

DC Current Gain -hFE =30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD243; -60V(Min)- BD243A -80V(Min)- BD243B; -100V(Min)- BD243C Complement to Type BD243/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation

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isc Silicon PNP Power Transistor BD244/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD243; -60V(Min)- BD243A -80V(Min)- BD243B; -100V(Min)- BD243C ·Complement to Type BD243/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD244 -45 BD244A -60 VCBO Collector-Base Voltage V BD244B -80 BD244C -100 BD244 -45 VCEO Collector-Emitter Voltage BD244A -60 V BD244B -80 BD244C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6.
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