Datasheet Details
| Part number | BD246B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.85 KB |
| Description | PNP Transistor |
| Download | BD246B Download (PDF) |
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Overview: isc Silicon PNP Power Transistor BD246/A/B/C.
Download the BD246B datasheet PDF. This datasheet also includes the BD246 variant, as both parts are published together in a single manufacturer document.
| Part number | BD246B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.85 KB |
| Description | PNP Transistor |
| Download | BD246B Download (PDF) |
|
|
|
·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246;
-60V(Min)- BD246A -80V(Min)- BD246B;
-100V(Min)- BD246C ·Complement to Type BD245/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD246 -55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD246A BD246B -70 -90 BD246C -115 BD246 -45 VCEO Collector-Emitter Voltage BD246A -60 BD246B -80 BD246C -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 ICM Collector Current-Peak -15 IB Base Current -3 Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ 3 80 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.56 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD246/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD246 V(BR)CEO Collector-Emitter Breakdown Voltage BD246A BD246B BD246C VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(on)-1 Base-Emitter On Voltage VBE(on)-2 Base-Emitter On Voltage BD246 ICES Collector Cutoff Current BD246A BD246B BD246C ICEO Collector Cutoff Current BD246/A BD246B/C IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain fT Current-Gain—Bandwidth Product CONDITIONS IC= -30mA ;IB=0 IC= -3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD246B | PNP SILICON POWER TRANSISTORS | Power Innovations Limited |
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BD246B | SILICON POWER TRANSISTOR | SavantIC |
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BD246B | PNP SILICON POWER TRANSISTORS | Comset Semiconductors |
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BD246 | PNP SILICON POWER TRANSISTORS | Power Innovations Limited |
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BD246 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| BD246 | PNP Transistor |
| BD246A | PNP Transistor |
| BD246C | PNP Transistor |
| BD240 | PNP Transistor |
| BD240A | PNP Transistor |
| BD240B | PNP Transistor |
| BD240C | PNP Transistor |
| BD241 | NPN Transistor |
| BD241A | NPN Transistor |
| BD241B | NPN Transistor |