Description
Collector Current -IC= 25A - plement to Type BD250/A/B/C - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in general purpose power amplifier and switching applications SYMBOL PARAMETER VALUE UNIT BD249 55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD249A BD249B 70 90 V BD249C 115 BD249 45 VCEO Collector-Emitter Voltage BD249A 60 V BD249B 80 BD249C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB Base Current Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 3 W 125 150 ℃ Tstg Storage Temperature Range SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c 1.0 ℃/W INCHANGE Semiconductor BD249/A/B/C isc website：.iscsemi.
