isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD249/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD249
45
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD249A
BD249B
IC= 30mA ;IB=0
60
80
V
BD249C
100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
1.8
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 5A
4.0
V
VBE(on)-1 Base-Emitter On Voltage
IC= 15A; VCE= 4V
2.0
V
VBE(on)-2 Base-Emitter On Voltage
IC= 25A; VCE= 4V
4.0
V
BD249
VCE= 55V; VBE= 0
ICES
Collector
Cutoff Current
BD249A
BD249B
VCE= 70V; VBE= 0
VCE= 90V; VBE= 0
0.7 mA
BD249C
VCE= 115V; VBE= 0
ICEO
Collector
Cutoff Current
BD249/A
BD249B/C
VCE= 30V;IB= 0
VCE= 60V;IB= 0
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0 mA
hFE-1
DC Current Gain
IC= 1.5A; VCE= 4V
25
hFE-2
DC Current Gain
IC= 15A; VCE= 4V
10
hFE-3
DC Current Gain
IC= 25A; VCE= 4V
5
Switching times
ton
Turn-on Time
toff
Turn-off Time
IC= 5A; IB1= -IB2= 0.5A;
RL= 5Ω; VBE(off)= -5V
0.3
μs
0.9
μs
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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