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BD249B - NPN Transistor

Download the BD249B datasheet PDF. This datasheet also covers the BD249 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BD249-INCHANGE.pdf) that lists specifications for multiple related part numbers.

General Description

·Collector Current -IC= 25A ·Complement to Type BD250/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD249 55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD249A BD249B 70 90 V BD249C 115 BD249 45 VCEO Collector-Emitter Voltage BD249A 60 V BD249B 80 BD249C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB Base Current Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 3 W 125 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W INCHANGE Semiconductor BD249/A/B/C isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD249/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT BD249 45 V(BR)CEO Collector-Emitter Breakdown Voltage BD249A BD249B IC= 30mA ;IB=0 60 80 V BD249C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A;

IB= 1.5A 1.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A;

Overview

isc Silicon NPN Power Transistor.