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INCHANGE

BD249B Datasheet Preview

BD249B Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector Current -IC= 25A
·Complement to Type BD250/A/B/C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BD249
55
VCER
Collector-Emitter
Voltage (RBE= 100Ω)
BD249A
BD249B
70
90
V
BD249C
115
BD249
45
VCEO
Collector-Emitter
Voltage
BD249A
60
V
BD249B
80
BD249C
100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
40
A
IB
Base Current
Collector Power Dissipation
PC
@ Ta=25
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
5
A
3
W
125
150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0 /W
INCHANGE Semiconductor
BD249/A/B/C
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BD249B Datasheet Preview

BD249B Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD249/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD249
45
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD249A
BD249B
IC= 30mA ;IB=0
60
80
V
BD249C
100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
1.8
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 5A
4.0
V
VBE(on)-1 Base-Emitter On Voltage
IC= 15A; VCE= 4V
2.0
V
VBE(on)-2 Base-Emitter On Voltage
IC= 25A; VCE= 4V
4.0
V
BD249
VCE= 55V; VBE= 0
ICES
Collector
Cutoff Current
BD249A
BD249B
VCE= 70V; VBE= 0
VCE= 90V; VBE= 0
0.7 mA
BD249C
VCE= 115V; VBE= 0
ICEO
Collector
Cutoff Current
BD249/A
BD249B/C
VCE= 30V;IB= 0
VCE= 60V;IB= 0
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0 mA
hFE-1
DC Current Gain
IC= 1.5A; VCE= 4V
25
hFE-2
DC Current Gain
IC= 15A; VCE= 4V
10
hFE-3
DC Current Gain
IC= 25A; VCE= 4V
5
Switching times
ton
Turn-on Time
toff
Turn-off Time
IC= 5A; IB1= -IB2= 0.5A;
RL= 5Ω; VBE(off)= -5V
0.3
μs
0.9
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BD249B
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BD249B Datasheet PDF





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