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BD250A Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

Download the BD250A datasheet PDF. This datasheet also includes the BD250 variant, as both parts are published together in a single manufacturer document.

General Description

·Collector Current -IC= -25A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD250;

-60V(Min)- BD250A -80V(Min)- BD250B;

-100V(Min)- BD250C ·Complement to Type BD249/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD250 -55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD250A BD250B -70 -90 BD250C -115 BD250 -45 VCEO Collector-Emitter Voltage BD250A -60 BD250B -80 BD250C -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -25 ICM Collector Current-Peak -40 IB Base Current -5 Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ 3 125 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BD250/A/B/C isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD250/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD250 V(BR)CEO Collector-Emitter Breakdown Voltage BD250A BD250B IC= -30mA;