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BD262 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -60V(Min.) ·DC Current Gain— : hFE = 750(Min) @ IC= -2A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -6 ICM Collector Current-Peak -10 IB Base Current -0.1 PC Collector Power Dissipation TC=25℃ 36 Ti Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD262 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A ,IB= -20mA VBE(on) Base-Emitter On Voltage IC= -4A;

Overview

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor.