Datasheet Details
| Part number | BD262 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 231.56 KB |
| Description | PNP Transistor |
| Datasheet |
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| Part number | BD262 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 231.56 KB |
| Description | PNP Transistor |
| Datasheet |
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·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -60V(Min.) ·DC Current Gain— : hFE = 750(Min) @ IC= -2A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -6 ICM Collector Current-Peak -10 IB Base Current -0.1 PC Collector Power Dissipation TC=25℃ 36 Ti Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD262 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A ,IB= -20mA VBE(on) Base-Emitter On Voltage IC= -4A;
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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